RTP Q-Switch

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RTP crystal is an excellent material for electro-optic applications. It offers a combination of advantages including large electro-optic coefficient, high damage threshold, high resistivity, broad transparency range, non-hygroscopicity, low insertion loss, and suitability for high-repetition-rate applications. Moreover, it exhibits no gray tracking under high power laser irradiation, making it an optimal material for electro-optic Q-Switches, particularly for high-repetition-rate laser systems.

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Product Features & Applications Physical & Optical Properties Product Specifications Standard Products

To compensate for static birefringence and reduce the influence of temperature variation on the refractive index of the crystal, the two RTP crystals are rotated 90° relative to each other about the light propagation axis in an RTP Q-Switch. The RTP Q-Switch utilizes the transverse electro-optic effect, where the direction of the applied electric field is perpendicular to the light propagation direction. By adjusting the cross-sectional dimensions and the length along the propagation direction, the operating voltage can be reduced. RTP Q-Switches feature good temperature stability and low piezoelectric ringing, making them suitable for applications over a wide temperature range and in high-repetition-rate scenarios. They are widely used in aerospace, defense, medical, industrial, and scientific research fields.

Applications:

- Q-Switching

- Pulse Picker

- Cavity Dumping

- Attenuator

Features:

- Low operating voltage

- Broad operating wavelength range: 420 nm – 2800 nm.

- Laser wavelengths: 755 / 1064 / 1342 / 1535 / 2100 / 2780 nm.

- Wide operating temperature range: –50 °C to +70 °C.

- High resistivity: > 10¹¹ Ω·cm.

- High damage threshold: > 10 J/cm² @ 1064 nm, 10 ns, 10 Hz.

- Low insertion loss: < 1% @ 1064 nm.

- Non-hygroscopic.

- No piezoelectric ringing effect, suitable for high repetition rate applications.

Physical and Optical Properties of RTP Crystal

Crystal structure	Orthorhombic
Lattice parameters	a = 12.96 Å; b =10.56 Å; c =6.49 Å
Mohs hardness	5
Density	3.6g/cm³
Melting point	~1000℃
Ferroelectric transition temperature	~810℃
Color	Transparent
Coefficient of thermal expansion (CTE)	α_x=1.01x10^-5/K α_y =1.37x10^-5/K α_z =-4.17x10^-6/K
Dielectric constant	E_eff= 13.0
Thermo-optic coefficient (dn/dT)	dn_x/dT=4.8534E-6/K dn_y/dT=7.5952E-6/K dn_z/dT=1.5014E-5/K
Resistivity	~10¹¹-10¹²Ω·cm
Hygroscopicity	Non-hygroscopic
Transmission range	350~4500 nm

Standard Products (1064nm)

P/N	Halfwave voltage	Capacitance	Dimension	W	H	L	Hc	D
QR2203A	2700V±10%	≤2pF	2×2×8	5.2	8.3	8	5.7	5
QR2205A	1600V±10%	≤3pF	2×2×12	5.9	8.6	12	5.7	8
QR2210A	800V±10%	≤5pF	2×2×22	5.9	8.6	22	5.7	18
QR3305A	2400V±10%	≤3pF	3×3×14	7.3	10.0	14	6.4	8
QR3308A	1500V±10%	≤4pF	3×3×20	7.3	10.0	20	6.4	13
QR4405A	3200V±10%	≤3pF	4×4×14	8.7	11.5	14	7.1	8
QR4410A	1600V±10%	≤5pF	4×4×25	8.7	11.5	25	7.1	18
QR5505A	4000V±10%	≤3pF	5×5×14	10.1	12.9	14	7.9	8
QR5510A	2000V±10%	≤5pF	5×5×25	10.1	12.9	25	7.9	18
QR6605A	4800V±10%	≤3pF	6×6×14	11.5	14.3	14	8.6	8
QR6606A	4000V±10%	≤3pF	6×6×16	11.5	14.3	16	8.6	8
QR6610A	2400V±10%	≤5pF	6×6×25	11.5	14.3	25	8.6	18
QR7705A	5600V±10%	≤3pF	7×7×14	12.9	15.7	14	9.3	8
QR7707A	4000V±10%	≤4pF	7×7×18	12.9	15.7	18	9.3	13
QR7710A	2800V±10%	≤5pF	7×7×25	12.9	15.7	25	9.3	18
QR8805A	6400V±10%	≤3pF	8×8×14	14.3	17.1	14	10.0	8
QR8808A	4000V±10%	≤4pF	8×8×20	14.3	17.1	20	10.0	13
QR8810A	3200V±10%	≤5pF	8×8×25	14.3	17.1	25	10.0	18
QR9909A	4000V±10%	≤5pF	9×9×25	15.0	18.2	25	10.7	18
QR1005A	8000V±10%	≤3pF	10×10×14	16.5	19.6	14	11.4	8

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RTP Q-Switch

Software size:

826.7KB

File type:

pdf

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