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  • Name: Nd:YVO4
  • No.: 133
  • Update: 2014-08-01
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Nd doped Yttrium vanadate (Nd:YVO4) is the most efficient laser host crystal for diode pumping among the current commercial laser crystals, especially for low to medium power. This is mainly due to Nd:YVO4' s absorption and emission features which surpass Nd:YAG. Pumped by laser diodes, Nd:YVO4 crystal has been incorporated with NLO crystals (KTP, BBO or BIBO ) to frequency-shift the output from the near infrared to green, blue, or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers, especially when compact design and single-longitudinal-mode outputs are required

 CRYSTECH offers:

Various doping concentration from 0.1% to 3%

Doping concentration tolerance: ±0.05%(atm%<1%), ±0.1%(atm%≥1%)

With quick delivery

With competitive price

 

APPLICATION:

Industrial Laser

Medical Laser

Laser show system

Mainly used for end-pumped CW and QCW low and medium power solid state lasers.

ADVANTAGE:

Low lasing threshold and high slope efficiency

Large stimulated emission cross-section at lasing wavelength

High absorption over a wide pumping wavelength bandwidth

uniaxial and large birefringence, emits polarized laser

Low dependency on pumping wavelength and easy to get single mode output

 

 

Dopant

0.1% ~ 3%

Orientation

A-CUT +/-0.5°

Size&Tolerance

 W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm

Surface quality

10/5

Perpendicularity

≤5′

Parallelism

 ≤10″

Bevel

<0.2mmx45°

Flatness

 λ/10@633nm

Chips

<0.1mm

TWD

 λ/6@633nm

CA

≥95%

Coatings

C1--- AR@1064(R<0.2%)

C2--- AR@1064(R<0.2%)&532(R<0.5%)

C3--- AR@1064(R<0.2%)&808(R<0.5%)

C4--- AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%)

C5--- HR@1064(R>99.8%)&HT@808(T>95%)

C6--- HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%)

Damage Threshold

1GW/cm² 10ns 10Hz at 1064nm

 

 

 

P/N

Doping

Cut Angle

Size(mm)

Coating

NYV-20-331-C6/C2

2%

A-CUT

3x3x1

S1:HR@1064&532&HT@808nm

S2:AR@1064&532nm

NYV-10-332-C6/C2

1%

A-CUT

3x3x2

S1:HR@1064&532&HT@808nm

S2:AR@1064&532nm

NYV-10-333-C6/C2

1%

A-CUT

3x3x3

S1:HR@1064&532&HT@808nm

S2:AR@1064&532nm

NYV-07-333-C6/C2

0.7%

A-CUT

3x3x3

S1:HR@1064&532&HT@808nm

S2:AR@1064&532nm

NYV-07-333-C4/C2

0.7%

A-CUT

3x3x3

S1:AR@1064&532&808nm

S2:AR@1064&532nm

NYV-07-335-C4/C2

0.7%

A-CUT

3x3x5

S1:HR@1064&532&HT@808nm

S2:AR@1064&532nm

NYV-05-335-C5/C1

0.5%

A-CUT

3x3x5

S1:HR@1064&808nm

S2:AR@1064nm

NYV-05-3310-C3/C1

0.5%

A-CUT

3x3x10

S1:AR@1064&808nm

S2:AR@1064nm

NYV-03-3310-C3/C1

0.3%

A-CUT

3x3x10

S1:AR@1064&808nm

S2:AR@1064nm

NYV-03-3312-C3/C1

0.3%

A-CUT

3x3x12

S1:AR@1064&808nm

S2:AR@1064nm

NYV-027-3310-C3/C1

0.27%

A-CUT

3x3x10

S1:AR@1064&808nm

S2:AR@1064nm

NYV-027-3312-C3/C1

0.27%

A-CUT

3x3x12

S1:AR@1064&808nm

S2:AR@1064nm

NYV-02-3310-C3/C1

0.2%

A-CUT

3x3x10

S1:AR@1064&808nm

S2:AR@1064nm

NYV-02-3312-C3/C1

0.2%

A-CUT

3x3x12

S1:AR@1064&808nm

S2:AR@1064nm

 

 

Physical Proertie:

 

Crystal Structure

Tetragonal System

Space Group

I41/amd 

Lattice Constants

a=b=0.71183nm, c=0.62932nm

Melting Temperature

1825

Density

4.22g/cm3

Thermal Conductivity

<100>(a): 0.0510 W/cmK

<001>(c): 0.0523 W/cmK

Thermal Expansion@25

αa=4.43 ×10-6/K

αc=11.37 ×10-6/K

Mohs hardness

4-5

Index of Refraction

no=1.958, ne=2.168

Thermal Optical Coefficient

dna/dT=  8.5×10-6/K

dnc/dT=  3.0×10-6/K

 

 

Optical Properties:

 

 

lasing wavelength

1064nm, 1342nm, 914nm

Pump Wavelength

808nm

Emission Cross section @1064nm

25 ×10-19cm2

absorption cross section @ 808nm

2.7×10-19cm2 (1 at% Nd3+)

absorption coefficient@808nm

30.6/cm( EC ),  11.4 /cm (EC)

Intrinsic loss:

0.02cm-1 @1064nm

Gain bandwidth:

0.96nm@1064nm

Polarization

EC (parallel to C axis, π polarization)

Fluorescent lifetime

90 μs (1% Nd doping)

Sellmeier Equation

n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2

ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2

 

Laser Properties:

The Nd:YVO4 crystal has large stimulated emission cross-sections at both 1064nm and 1342nm. The stimulated emission cross-section of an a-axis cut Nd:YVO4 crystal at 1064nm is about 4 times higher than that of the Nd:YAG crystal. Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG. Because of its high pump quantum efficiency, the slope efficiency of Nd:YVO4 can be very high if the laser cavity is properly designed. In the following Table lists the major laser properties of Nd:YVO4 in comparison with those of Nd:YAG.

 

 

Laser crystal

Doping(atm%)

σ(x10-19cm2)

a (cm-1)

τ (μs)

La (mm)

Pth(mW)

η s(%)

Nd:YVO4(a-cut)

1.0
2.0

25
25

31.2
72.4

90
50

0.32
0.14

30
78

52
48.6

Nd:YVO4(c-cut)

1.1

7

9.2

90

 

231

45.5

Nd:YAG

0.85

6

7.1

230

1.41

115

38.6

 

 

Note: stimulated emission cross-sections (σ), Absorption Coefficient (α), Fluorescent lifetime (τ),Absorption Length (La),threshold Power (Pth) , Pump Quantum Efficiency (ηs).

 

 

Crystals

Size (mm3)

Pump Power

Output (at 1064nm)

Nd:YVO4

3x3x1

850mW

350mW

Nd:YVO4

3x3x5

15W

6W

Nd:YAG

3x3x2

850mW

34mW

 

Diode pumped Nd:YVO4 laser output comparing with diode pumped Nd:YAG laser.