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Nd:YVO4
Product Description
| Dopant | 0.1% ~ 3% | Orientation | A-CUT +/-0.5° |
| Size&Tolerance | W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm | ||
| Surface quality | 10/5 | Perpendicularity | ≤5′ |
| Parallelism | ≤10″ | Bevel | <0.2mmx45° |
| Flatness | λ/10@633nm | Chips | <0.1mm |
| TWD | λ/6@633nm | CA | ≥95% |
| Coatings |
C1--- AR@1064(R<0.2%) C2--- AR@1064(R<0.2%)&532(R<0.5%) C3--- AR@1064(R<0.2%)&808(R<0.5%) C4--- AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%) C5--- HR@1064(R>99.8%)&HT@808(T>95%) C6--- HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%) |
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| Doping | Cut Angle | Size(mm) | Coating |
| 2% | A-CUT | 3x3x1 | S1:HR@1064&532&HT@808nm S2:AR@1064&532nm |
| 1% | A-CUT | 3x3x2 | S1:HR@1064&532&HT@808nm S2:AR@1064&532nm |
| 1% | A-CUT | 3x3x3 | S1:HR@1064&532&HT@808nm S2:AR@1064&532nm |
| 0.7% | A-CUT | 3x3x3 | S1:HR@1064&532&HT@808nm S2:AR@1064&532nm |
| 0.7% | A-CUT | 3x3x3 | S1:AR@1064&532&808nm S2:AR@1064&532nm |
| 0.7% | A-CUT | 3x3x5 | S1:HR@1064&532&HT@808nm S2:AR@1064&532nm |
| 0.5% | A-CUT | 3x3x5 | S1:HR@1064&808nm S2:AR@1064nm |
| 0.5% | A-CUT | 3x3x10 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.3% | A-CUT | 3x3x10 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.3% | A-CUT | 3x3x12 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.27% | A-CUT | 3x3x10 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.27% | A-CUT | 3x3x12 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.2% | A-CUT | 3x3x10 | S1:AR@1064&808nm S2:AR@1064nm |
| 0.2% | A-CUT | 3x3x12 | S1:AR@1064&808nm S2:AR@1064nm |
Physical Proertie:
| Crystal Structure | Tetragonal System |
| Space Group | I41/amd |
| Lattice Constants | a=b=0.71183nm, c=0.62932nm。 |
| Melting Temperature | 1825℃ |
| Density | 4.22g/cm3 |
| Thermal Conductivity | <100>(a): 0.0510 W/cmK <001>(c): 0.0523 W/cmK |
| Thermal Expansion@25℃ | αa=4.43 ×10-6/K αc=11.37 ×10-6/K |
| Mohs hardness | 4-5 |
| Index of Refraction | no=1.958, ne=2.168 |
| Thermal Optical Coefficient | dna/dT= 8.5×10-6/K dnc/dT= 3.0×10-6/K |
| lasing wavelength | 1064nm, 1342nm, 914nm |
| Pump Wavelength | 808nm |
| Emission Cross section @1064nm | 25 ×10-19cm2 |
| absorption cross section @ 808nm | 2.7×10-19cm2 (1 at% Nd3+) |
| absorption coefficient@808nm | 30.6/cm( E∥C ), 11.4 /cm (E⊥C) |
| Intrinsic loss: | 0.02cm-1 @1064nm |
| Gain bandwidth: | 0.96nm@1064nm |
| Polarization | E∥C (parallel to C axis, π polarization) |
| Fluorescent lifetime | 90 μs (1% Nd doping) |
| Sellmeier Equation | n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2 |
Laser Properties: The Nd:YVO4 crystal has large stimulated emission cross-sections at both 1064nm and 1342nm. The stimulated emission cross-section of an a-axis cut Nd:YVO4 crystal at 1064nm is about 4 times higher than that of the Nd:YAG crystal. Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG. Because of its high pump quantum efficiency, the slope efficiency of Nd:YVO4 can be very high if the laser cavity is properly designed. In the following Table lists the major laser properties of Nd:YVO4 in comparison with those of Nd:YAG.
| Laser crystal | Doping(atm%) | σ(x10-19cm2) | a (cm-1) | τ (μs) | La (mm) | Pth(mW) | η s(%) |
| Nd:YVO4(a-cut) | 1.0 2.0 |
25 25 |
31.2 72.4 |
90 50 |
0.32 0.14 |
30 78 |
52 48.6 |
| Nd:YVO4(c-cut) | 1.1 | 7 | 9.2 | 90 | 231 | 45.5 | |
| Nd:YAG | 0.85 | 6 | 7.1 | 230 | 1.41 | 115 | 38.6 |
| Crystals | Size (mm3) | Pump Power | Output (at 1064nm) |
| Nd:YVO4 | 3x3x1 | 850mW | 350mW |
| Nd:YVO4 | 3x3x5 | 15W | 6W |
| Nd:YAG | 3x3x2 | 850mW | 34mW |
Key words:
nd:yvo4
yvo4
vanadate
nd doped yttrium vanadate
ND:YVO4
ND:YVO4 manufacturers
customized ND:YVO4
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