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Nd doped Yttrium vanadate (Nd:YVO4) is the most efficient laser host crystal for diode pumping among the current commercial laser crystals, especially for low to medium power. This is mainly due to Nd:YVO4' s absorption and emission features which surpass Nd:YAG.
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Product description
Nd doped Yttrium vanadate (Nd:YVO4) is the most efficient laser host crystal for diode pumping among the current commercial laser crystals, especially for low to medium power. This is mainly due to Nd:YVO4' s absorption and emission features which surpass Nd:YAG. Pumped by laser diodes, Nd:YVO4 crystal has been incorporated with NLO crystals (KTP, BBO or BIBO ) to frequency-shift the output from the near infrared to green, blue, or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers, especially when compact design and single-longitudinal-mode outputs are required
CRYSTECH offers:
Various doping concentration from 0.1% to 3%
Doping concentration tolerance: ±0.05%(atm%<1%), ±0.1%(atm%≥1%)
With quick delivery
With competitive price
Industrial Laser
Medical Laser
Laser show system
Mainly used for end-pumped CW and QCW low and medium power solid state lasers.
Low lasing threshold and high slope efficiency
Large stimulated emission cross-section at lasing wavelength
High absorption over a wide pumping wavelength bandwidth
uniaxial and large birefringence, emits polarized laser
Low dependency on pumping wavelength and easy to get single mode output
Dopant 0.1% ~ 3% Orientation A-CUT +/-0.5°
Size&Tolerance  W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm
Surface quality 10/5 Perpendicularity ≤5′
Parallelism  ≤10″ Bevel <0.2mmx45°
Flatness  λ/10@633nm Chips <0.1mm
TWD  λ/6@633nm CA ≥95%
Coatings C1--- AR@1064(R<0.2%) C2--- AR@1064(R<0.2%)&532(R<0.5%) C3--- AR@1064(R<0.2%)&808(R<0.5%) C4--- AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%) C5--- HR@1064(R>99.8%)&HT@808(T>95%) C6--- HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%)
Damage Threshold 1GW/cm² 10ns 10Hz at 1064nm

P/N Doping Cut Angle Size(mm) Coating
NYV-20-331-C6/C2 2% A-CUT 3x3x1 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-10-332-C6/C2 1% A-CUT 3x3x2 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-10-333-C6/C2 1% A-CUT 3x3x3 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-07-333-C6/C2 0.7% A-CUT 3x3x3 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-07-333-C4/C2 0.7% A-CUT 3x3x3 S1:AR@1064&532&808nm S2:AR@1064&532nm
NYV-07-335-C4/C2 0.7% A-CUT 3x3x5 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-05-335-C5/C1 0.5% A-CUT 3x3x5 S1:HR@1064&808nm S2:AR@1064nm
NYV-05-3310-C3/C1 0.5% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
NYV-03-3310-C3/C1 0.3% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
NYV-03-3312-C3/C1 0.3% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm
NYV-027-3310-C3/C1 0.27% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
NYV-027-3312-C3/C1 0.27% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm
NYV-02-3310-C3/C1 0.2% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
NYV-02-3312-C3/C1 0.2% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm


Physical Proertie:
Crystal Structure Tetragonal System
Space Group I41/amd 
Lattice Constants a=b=0.71183nm, c=0.62932nm。
Melting Temperature 1825℃
Density 4.22g/cm3
Thermal Conductivity <100>(a): 0.0510 W/cmK <001>(c): 0.0523 W/cmK
Thermal Expansion@25℃ αa=4.43 ×10-6/K αc=11.37 ×10-6/K
Mohs hardness 4-5
Index of Refraction no=1.958, ne=2.168
Thermal Optical Coefficient dna/dT=  8.5×10-6/K dnc/dT=  3.0×10-6/K
  Optical Properties:
lasing wavelength 1064nm, 1342nm, 914nm
Pump Wavelength 808nm
Emission Cross section @1064nm 25 ×10-19cm2
absorption cross section @ 808nm 2.7×10-19cm2 (1 at% Nd3+)
absorption coefficient@808nm 30.6/cm( E∥C ),  11.4 /cm (E⊥C)
Intrinsic loss: 0.02cm-1 @1064nm
Gain bandwidth: 0.96nm@1064nm
Polarization E∥C (parallel to C axis, π polarization)
Fluorescent lifetime 90 μs (1% Nd doping)
Sellmeier Equation n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2
Laser Properties: The Nd:YVO4 crystal has large stimulated emission cross-sections at both 1064nm and 1342nm. The stimulated emission cross-section of an a-axis cut Nd:YVO4 crystal at 1064nm is about 4 times higher than that of the Nd:YAG crystal. Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG. Because of its high pump quantum efficiency, the slope efficiency of Nd:YVO4 can be very high if the laser cavity is properly designed. In the following Table lists the major laser properties of Nd:YVO4 in comparison with those of Nd:YAG.  
Laser crystal Doping(atm%) σ(x10-19cm2) a (cm-1) τ (μs) La (mm) Pth(mW) η s(%)
Nd:YVO4(a-cut) 1.0
Nd:YVO4(c-cut) 1.1 7 9.2 90   231 45.5
Nd:YAG 0.85 6 7.1 230 1.41 115 38.6
Note: stimulated emission cross-sections (σ), Absorption Coefficient (α), Fluorescent lifetime (τ),Absorption Length (La),threshold Power (Pth) , Pump Quantum Efficiency (ηs).
Crystals Size (mm3) Pump Power Output (at 1064nm)
Nd:YVO4 3x3x1 850mW 350mW
Nd:YVO4 3x3x5 15W 6W
Nd:YAG 3x3x2 850mW 34mW
Diode pumped Nd:YVO4 laser output comparing with diode pumped Nd:YAG laser.
Corresponding parameter set not found, please add it in property template of background